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dc to 6 ghz envelope and trupwr rms detector data sheet ADL5511 rev. a information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 781.329.4700 www.analog.com fax: 781.461.3113 ?2011C2012 analog devices, inc. all rights reserved. features envelope tracking rf detector with output proportional to input voltage separate trupwr rms output no balun or external tuning required excellent temperature stability input power dynamic range of 47 db input frequency range from dc to 6 ghz 130 mhz envelope bandwidth envelope delay: 2 ns single-supply operation: 4.75 v to 5.25 v supply current: 21.5 ma power-down mode: 130 w applications rms power and envelope detection of w-cdma, cdma2000, lte, and other complex waveforms drain modulation based power amplifier linearization power amplifier linearization employing envelope-tracking methods functional block diagram rfin enbl rms 400 ? 20pf envelope vrms venv eref vpos vpos v pos 400 ? flt1 flt2 flt3 comm flt4 0.8pf 0.4pf 10k ? 5pf 250 ? 250 ? 100 ? ADL5511 bias and power- down control g = 1.7 g = 1.5 nc 15 14 4 2 3 11 10 9 13 6 7 8 12 16 1 5 09602-001 figure 1. t ?68ns ch1 200mv ? ch2 30.8mv ? m 100ns a ch4 1.60v ch3 200mv ch4 234mv ? ch1 high 20mv vrms venv rf input 09602-002 figure 2. rms and envelope response to a 20 mhz qpsk-based lte carrier (test model e-tm1_1_20mhz) general description the ADL5511 is an rf envelope and trupwr? rms detector. the envelope output voltage is presented as a voltage that is proportional to the envelope of the input signal. the rms output voltage is independent of the peak-to-average ratio of the input signal. the rms output is a linear-in-v/v voltage with a conversion gain of 1.9 v/v rms at 900 mhz. the envelope output has a conversion gain of 1.46 v/v at 900 mhz and is referenced to an internal 1.1 v reference voltage, which is available on the eref pin. the ADL5511 can operate from dc to 6 ghz on signals with envelope bandwidths up to 130 mhz. the extracted envelope can be used for rf power amplifier (pa) linearization and efficiency enhancements and the rms output can be used for rms power measurement. the high rms accuracy and fast envelope response are particularly useful for envelope detection and power measurement of broadband, high peak-to-average signals that are used in cdma2000, w-cdma, and lte systems. the ADL5511 operates from ?40c to +85c and is available in a 16-lead, 3 mm 3 mm lfcsp package.
ADL5511 data sheet rev. a | page 2 of 28 table of contents features .............................................................................................. 1 applications ....................................................................................... 1 functional block diagram .............................................................. 1 general description ......................................................................... 1 revision histo ry ............................................................................... 2 specifications ..................................................................................... 3 absolute maximum ratings ............................................................ 7 esd caution .................................................................................. 7 pin configuration and function descriptions ............................. 8 typical performance characteristics ............................................. 9 circuit description ......................................................................... 17 envelope propagation delay ..................................................... 17 rms circuit description ........................................................... 17 rms filtering .............................................................................. 17 output drive capability and buffering ................................... 18 applications information .............................................................. 19 basic connections ...................................................................... 19 operation below 1 ghz/envelope filtering ........................... 19 choosi ng a value for the rms averaging capacit or (c flt4 ) .. 20 envelope tracking accuracy .................................................... 21 time domain envelope tracking accuracy ........................... 21 vrms and venv output offset ............................................. 22 device calibration and error calculation .............................. 22 error vs. frequency .................................................................... 23 evaluation board ........................................................................ 24 outline dimensions ....................................................................... 26 ordering guide .......................................................................... 26 revision history 2/12 rev. 0 to rev. a changes to equation 4 ................................................................... 1 9 updated outline dimensions ....................................................... 26 7 / 11 rev ision 0: initial version
data sheet ADL5511 rev. a | page 3 of 28 specifications t a = 25c, v pos = 5 v, c flt4 = 100 nf, 75 shunt termination resistor to ground on (ac - coupled) rfin, three - p oint calibration on v env and v rms at +5 dbm, ? 15 dbm , and ? 26 dbm, unless otherwise noted. table 1 . parameter condition s min typ max unit frequency range input rfin dc 6 ghz envelope conversion (100 mhz) input rfin to output (v env ? v eref ) input range (1 db error) cw input 46 db maximum input level 1 db error 17 dbm minimum input level 1 db error ? 29 dbm conversion gain v env = (gain v in ) + intercept 1.4 2 v/v rms intercept ? 5 mv output voltage high power in p in = +10 dbm, + 707 mv rms 1.00 v low power in p in = ?20 dbm, + 22.4 mv rms 26 mv rms conversion input rfin to output ( v rms ) input range (1 db error) cw input 46 db maximum input level 1 db error 17 dbm minimum input level 1 db error ? 29 dbm conversion gain v rms = (gain v in ) + intercept 1. 92 v/v rms intercept 1 1 mv output voltage high power in p in = +10 dbm, + 707 mv rms 1.38 v low power in p in = ?20 dbm, +22.4 mv rms 53 mv envelope conversion (900 mhz) input rfin to output (v env ? v eref ) input range (1 db error) cw input 46 db maximum input level 1 db error 17 dbm minimum input level 1 db error ? 29 dbm conversion gain v env = (gain v in ) + intercept 1.4 6 v/v rms intercept ? 5 mv output voltage high power in p in = +10 dbm, + 707 mv rms 1.02 v low power in p in = ?20 dbm, +22.4 mv rms 26 mv rms conversion input rfin to output ( v rms ) input range (1 db error) cw input 46 db maximum input level 1 db error 17 dbm minimum input level 1 db error ? 29 dbm conversion gain v rms = (gain v in ) + intercept 1.9 v/v rms intercept 1 3 mv output voltage high power in p in = +10 dbm, + 707 mv rms 1.35 v low power in p in = ?20 dbm, +22.4 mv rms 54 mv
ADL5511 data sheet rev. a | page 4 of 28 parameter condition s min typ max unit envelope conversion (1900 mhz) input rfin to output (v env ? v eref ) input range (1 db error) cw input 47 db maximum input level 1 db error 17 dbm minimum input level 1 db erro r ? 30 dbm conversion gain v env = (gain v in ) + intercept 1.5 v/v rms intercept ? 5 mv output voltage high power in p in = +10 dbm, + 707 mv rms 1.05 v low power in p in = ?20 dbm, +22.4 mv rms 28 mv rms conversion input rfin to output ( v rms ) input range (1 db error) cw input 47 db maximum input level 1 db error 17 dbm minimum input level 1 db error ? 30 dbm conversion gain v rms = (gain v in ) + intercept 1.9 6 v/v rms intercept 1 4 mv output voltage high power in p in = +10 dbm, + 707 mv rms 1.40 v low power in p in = ?20 dbm, +22.4 mv rms 56 mv envelope conversion (2140 mhz) input rfin to output (v env ? v eref ) input range (1 db error) cw input 47 db maximum input level 1 db error 17 dbm minimum input level 1 db error ? 30 dbm conversion gain v env = (gain v in ) + intercept 1.5 3 v/v rms intercept ? 5 mv output voltage high power in p in = +10 dbm, + 707 mv rms 1.07 v low power in p in = ?20 dbm, +22.4 mv rms 28 mv rms conversion input rfin to output ( v rms ) input range (1 db error) cw input 47 db maximum input level 1 db error 17 dbm minimum input level 1 db error ? 30 dbm conversion gain v rms = (gain v in ) + intercept 1.99 v/v rms intercept 1 3 mv output v oltage high power in p in = +10 dbm, + 707 mv rms 1.42 v low power in p in = ?20 dbm, +22.4 mv rms 56 mv
data sheet ADL5511 rev. a | page 5 of 28 parameter condition s min typ max unit envelope conversion (2600 mhz) input rfin to output (v env ? v eref ) input range (1 db error) cw input 47 db maximum input level 1 d b error 17 dbm minimum input level 1 db error ? 30 dbm conversion gain v env = (gain v in ) + intercept 1. 56 v/v rms intercept ? 3 mv output voltage high power in p in = +10 dbm, + 707 mv rms 1.10 v low power in p in = ?20 dbm, +22.4 mv rm s 30 mv rms conversion input rfin to output ( v rms ) input range (1 db error) cw input 47 db maximum input level 1 db error 17 dbm minimum input level 1 db error ? 30 dbm conversion gain v rms = (gain v in ) + intercept 2. 04 v/v rms int ercept 1 5 mv output voltage high power in p in = +10 dbm, + 707 mv rms 1.46 v low power in p in = ?20 dbm, +22.4 mv rms 58 mv envelope conversion (3500 mhz) input rfin to output (v env ? v eref ) input range (1 db error) cw input 47 db maximum input level 1 db error 17 dbm minimum input level 1 db error ? 30 dbm conversion gain v env = (gain v in ) + intercept 1.5 6 v/v rms intercept ? 5 mv output voltage high power in p in = +10 dbm, + 707 mv rms 1.10 v low power in p in = ?20 dbm, +22.4 mv rms 28 mv rms conversion input rfin to output ( v rms ) input range (1 db error) cw input 47 db maximum input level 1 db error 17 dbm minimum input level 1 db error ? 30 dbm conversion gain v rms = (gain v in ) + inter cept 2.0 3 v/v rms intercept 1 2 mv output voltage high power in p in = +10 dbm, + 707 mv rms 1.46 v low power in p in = ?20 dbm, +22.4 mv rms 57 mv
ADL5511 data sheet rev. a | page 6 of 28 parameter condition s min typ max unit envelope conversion (6000 mhz) input rfin to output (v env ? v eref ) input range (1 db e rror) cw input 45 db maximum input level 1 db error 17 dbm minimum input level 1 db error ? 28 dbm conversion gain v env = (gain v in ) + intercept 0. 85 v/v rms intercept ? 10 mv output voltage high power in p in = +10 dbm, + 707 mv rms 0.60 v low power in p in = ?20 dbm, +22.4 mv rms 11 mv rms conversion input rfin to output ( v rms ) input range (1 db error) cw input 45 db maximum input level 1 db error 17 dbm minimum input level 1 db error ? 28 dbm conversion gain v r ms = (gain v in ) + intercept 1.11 v/v rms intercept 7 mv output voltage high power in p in = +10 dbm, + 707 mv rms 0.80 v low power in p in = ?20 dbm, +22.4 mv rms 35 mv envelope output pin venv maximum output voltage v pos = 5 v, r lo ad 500 ?, c load 10 pf 3.5 v output offset no signal at rfin 2 mv envelope bandwidth 3 db 130 mhz pulse response time input level = no signal to 5 dbm, 10% to 90% response time 4 ns envelope delay rfin to venv 2 ns output current drive l oad = 500 ? ||10 pf 15 ma rms output pin v rms maximum output voltage v pos = 5 v, r load 10 k ? 3.8 v output offset no signal at rfin 23 mv output current drive load = 1.3 k? 3 ma enable interface pin enbl logic level to enable power 4 . 7 5 v v pos 5. 2 5 v 3. 6 v logic level to disable power 4. 7 5 v v pos 5. 2 5 v 2.0 v power supplies operating range ? 40c < t a < +8 5c 4.75 5.25 v quiescent current rfin < ?10 dbm, enbl high 21.5 ma rfin < ?10 dbm, enbl low 26 a r fin = 15 dbm, enbl high 43.8 ma
data sheet ADL5511 rev. a | page 7 of 28 absolute maximum rat ings table 2 . parameter rating supply voltage, vpos 5.5 v enbl 0 v, vpos rfin (rfin ac - coupled ) 5 .6 v p -p equivalent rf power (p eak e nvelope p ower or cw) , re: 50 ? 19 dbm internal power dissipation 580 mw ja 68.9 c/w jc 17.5 c/w maximum junction temperature 1 2 5 c operating temperature range ? 40c to + 8 5 c storage temperature range ? 65c to +150c esd (ficdm) 1250 v esd (hbm) 2000 v stresses above those liste d under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not impli ed. exposure to absolute maximum rating conditions for extended periods may affect device reliability. esd caution
ADL5511 data sheet rev. a | page 8 of 28 pin configuration an d function descripti ons n ot es 1. nc = no connect. do not connect to this pin. 2 . t h e exposed pad s h o u l d b e c o nn e c t e d t o b ot h t h e r m a l and e l e c t r i ca l g r o unds . p i n 1 i nd i c a t o r 1 flt3 2 r fi n 3 flt1 4 enbl 1 1 vrms 12 nc 10 venv 9 eref 5 6 n c 7 nc 8 nc 15 16 14 13 to p v i ew ( n o t t o s ca l e ) ad l 5511 comm flt2 vpos flt4 nc 09602-103 figure 3. pin configuration table 3 . pin function descriptions pin o. mnemonic description 1, 16 flt3, flt2 external envelope filter. with the f lt3 an d f lt 2 pins not connected, two internal low - pass filters (operating in series) with corner frequencies of approximately 1000 mhz and 800 mhz remove the residual rf carrier (at two times the original input frequency) from the envelope signal. external, supply - referenced capacitors connected to flt3 and flt2 can be used to reduce this corner frequency. see the basic connections section for more information. 2 rfin rf input . rfin should be externally ac - coupled. rfin has a nominal input impedance of 250 ? . to achieve a broadband 50 ? input impedance, an external 75 ? shunt resistor should be connected between the so urce side of the a c coupling capacitor and ground . 3 f lt1 external envelope filter. a capacitor to ground on this pin can be used to reduce the nominal minimum input frequency . the capacitance on this pin helps to reduce any residual rf carrier presence o n the eref output pin. see the basic connections section for more information. 4 enbl device enable/disable . a logic high on this pin enable s the device. a logic low on this pin disables the device. 5 comm device ground . conne ct to a low impedance ground plane. 6, 7, 8, 12, 13 nc do n o t c onnect to these pins. 9 eref reference voltage for envelope output . the n ominal value is 1.1 v . 10 venv envelope output . the voltage on this pin represents the envelope of the input signal a nd is referred to eref. venv can source a current of up to 15 ma. c apacitive loading should not exceed 10 pf to achieve the specified envelope bandwidth. lighter loads should be c hosen when possible. the n ominal output voltages on eref and venv with no si gnal present track with temperature. for dc - coupled envelope output, eref should be used as a reference giving the true envelope voltage of v env ? v eref . for ac coupling of the envelope output, the venv pin can drive a 50 ? load, if maximum current drive c apability of 15 ma is not exceeded. see the output drive capability and buffering section for more information. 11 vrms rms output pin . this voltage is ground reference d and has a nominal swing of 0 v to 3.8 v. v rms has a linear - in - v/v transfer function with a nominal slope of 2 v/v. 14 f lt4 rms averaging capacitor. connect between flt4 and vpos. 15 vpos supply voltage pin . operational range is 4. 7 5 v to 5. 2 5 v with a supply cu rrent of 21.5 ma. 0 ep exposed pad. the exposed pad should be connected to both thermal and electrical ground s .
data sheet ADL5511 rev. a | page 9 of 28 typical performance characteristics t a = 25c, v pos = 5 v, c flt4 = 100 nf, 75 shunt termination resistor to ground on (ac - coupled) rfin, t a = +25 c (black), ? 40 c ( blue ), + 85 c ( red ), thr ee- point calibration on v env and v rms at +5 dbm, ?15 dbm , and ?26 dbm, unless otherwise noted. 0.001 0.01 0.1 1 10 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 20 output (v) input (dbm) 100mhz 900mhz 1900mhz 2140mhz 2600mhz 3500mhz 6000mhz 09602-003 figure 4. v env output vs. input level, at various frequencies at 25 c , supply 5 v 0.001 0.01 0.1 1 10 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 20 output (v) input (dbm) 5v, ?40c 5v, +25c 5v, +85c 09602-004 figure 5. v env outp ut vs. input level and temperature at 1900 mhz, supply 5 v 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 20 supply current (ma) input (dbm) 09602-005 ?40c +25c +85c figure 6. supply current vs. input level and temperature 0.01 0.1 1 10 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 20 output (v) input (dbm) 100mhz 900mhz 1900mhz 2140mhz 2600mhz 3500mhz 6000mhz 09602-006 figure 7. v rms output vs. input level, at various frequencies at 25 c, supply 5 v ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 20 0.01 0.1 1 10 output (v) input (dbm) 5v, ?40c 5v, +25c 5v, +85c 09602-007 figure 8. v rms output vs. input leve l and temperature at 1900 mhz, supply 5 v 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 50 100 150 200 250 300 350 400 450 0 1 2 3 4 5 6 shunt capacitance (pf) shunt resistance () frequency (ghz) 09602-008 shunt capacitance shunt resistance figure 9. input impedance vs. frequency
ADL5511 data sheet rev. a | page 10 of 28 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-009 figure 10 . v env output temperature drift from +25c , three - point calibration for multiple devices at ?40c, +25c, and +85 c at 100 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-010 figure 11 . v rms output temperature drift from +25c , three - point calibration for multiple devices at ?40c, +25c, and +85 c at 100 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-0 1 1 figure 12 . v env output temperature drift from +25c , three - point calibration for multiple devices at ?40c, +25c, and +85 c at 900 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-012 figure 13 . v env output delta from +25c output voltage for mu ltiple devices at ?40c and +85c at 100 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-013 figure 14 . v rms output delta from +25c output voltage for multiple devices at ?40c and +85c at 100 mhz ?3 ?2 ?1 0 1 2 3 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 p in (dbm) error (db) 09602-014 figure 15 . v env output delta from +25c output voltage for multiple devices at ?40c and +85c at 900 mhz
data sheet ADL5511 rev. a | page 11 of 28 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-015 figure 16 . v rms output temperature drift from +25c , three - point calibration for multiple devices at ?40c, +25c, and +85 c at 900 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-029 figure 17 . v env output temperature drift from +25c , three - point calibration for multiple devices at ?40c, +25c, and +85 c at 1900 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-030 figure 18 . v rms output temperature drift from +25c , three - point calibration for multiple d evices at ?40c, +25c, and +85 c at 1900 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-031 figure 19 . v rms output delta from +25c output voltage for multiple devices at ?40c and +85c at 900 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-032 figure 20 . v env output delta from +25c outpu t voltage for multiple devices at ?40c and +85c at 1900 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-033 figure 21 . v rms output delta from +25c output voltage for multiple devices at ?40c and +85c at 1900 mhz
ADL5511 data sheet rev. a | page 12 of 28 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-034 figure 22 . v env output temp erature drift from +25c , three - point calibration for multiple devices at ?40c, +25c, and +85 c at 2140 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-035 figure 23 . v rms output temperature drift from +25c , three - point calibration for multiple devices at ?40c, +25c, an d +85 c at 2140 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-036 figure 24 . v env output temperature drift from +25c , three - point calibration for multiple devices at ?40c, +25c, and +85 c at 2600 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-037 figure 25 . v env output delta from +25c o utput voltage for multiple devices at ?40c and +85c at 2140 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-038 figure 26 . v rms output delta from +25c output voltage for multiple devices at ?40c and +85c at 2140 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-039 figure 27 . v env output delta from +25c output voltage for multiple devices at ?40c and +85c at 2600 mhz
data sheet ADL5511 rev. a | page 13 of 28 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-040 figure 28 . v rms output temperature drift from +25c linear reference for multiple devices at ?40c, +25c, and +85c, 2600 mhz frequency ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-041 figure 29 . v env output temperature drift from +25c linear reference for multiple devices at ?40c, +25c, and +85c, 3500 mhz frequency ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-042 figure 30 . v rms output temperature drift from +25c linear refer ence for multiple devices at ?40c, +25c, and +85c, 3500 mhz frequency ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-043 figure 31 . v rms output delta from +25c output voltage for multiple devices at ?40c and +85c at 2600 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-044 figure 32 . v env output delta from +25c output voltage for multiple devices at ?40c and +85c at 3500 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-045 figure 33 . v rms output delta from +25c output voltage for multiple devices at ?40c and +85c at 3500 mhz
ADL5511 data sheet rev. a | page 14 of 28 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-046 figure 34 . v env output temperature drift from +25c linear reference for multiple devices at ?40c, +25c, and +85c, 6000 mhz frequency ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-047 figure 35 . v rms output temperature drift from +25c linear reference for multiple devi ces at ?40c, +25c, and +85c, 6000 mhz frequency ?80 ?70 ?60 ?50 ?40 ?30 ?20 ?10 0 10 20 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 rfin (dbm) 09602-020 thd (dbc) carrier suppression (dbc) envelope gain (db) figure 36 . thd on v env vs. rf input level; 1900 mhz rf input, am modulated by a 20 mhz sine wave (modulation index = 0.25), v env output ac - coupled into a 50 ? spectrum analyzer load ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-016 figure 37 . v env output delta from +25c output voltage for multiple devices at ?40c and +85c at 6000 mhz ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 ?3 ?2 ?1 0 2 1 3 p in (dbm) error (db) 09602-017 figure 38 . v rms output delta from +25c output voltage for multiple devices at ?40 c and +85c at 6000 mhz ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 2 1 10 100 1000 normalized v env frequenc y response (db) envelope frequenc y (mhz) ?40 c +25 c +85 c 09602-065 figure 39 . normalized v env frequency response , venv ac - coupled into a 50 ? spectrum analyzer load
data sheet ADL5511 rev. a | page 15 of 28 ch1 200mv m10ns a ch2 1.88v 2 1 t 11 1.6ns ? ch3 125mv ref4 125mv 10ns ? 09602-023 pulsed rfin +5dbm +1dbm ?3dbm ?10dbm v env figure 40 . v env output response to various rf input pulse levels 900 mhz fr equency ref4 125mv 1 s ch2 200mv m1s a ch4 2.2v r4 2 t ?824ns ? 09602-024 +5dbm pulsed rfin +1dbm ?3dbm ?10dbm v rms figure 41 . v rms output response to various rf input pulse levels 900 mhz frequency, c flt4 = open ref4 125mv 100 s ch2 200mv m100 s a ch4 2.2v r4 2 t ?100.5 s ? 09602-025 +5dbm +1dbm ?3dbm ?10dbm v rms pulsed rfin figure 42 . v rms output response to various rf input pulse levels, 900 mhz frequency, c flt4 = 100 nf ref1 250mv 1 s ch4 7v m1s a ch4 3.78v r1 4 t 3.996 s 09602-026 +5dbm v enb l +1dbm ?3dbm ?10dbm v env figure 43 . v env output response to enable gating at various rf input levels, 900 mhz frequency ref1 220mv 1 s ch4 7v m1s a ch4 3.78v r1 4 t 4.012 s 09602-027 +5dbm +1dbm ?3dbm ?10dbm v enb l v rms figure 44 . v rms output response to enable gating at various rf input levels, 900 mhz frequenc y, c flt4 = open dbc ref4 220mv 40 s ch4 7v m40 s a ch4 3.78v r4 4 t 160.4 s 09602-028 +5dbm +1dbm ?3dbm ?10dbm v enb l v rms figure 45 . v rms output response to enable gating at various rf input levels, 900 mhz frequency, c flt4 = 100 nf
ADL5511 data sheet rev. a | page 16 of 28 ?3 ?2 ?1 0 1 2 3 ?25 ?20 ?15 ?10 ?5 0 5 10 15 error (db) cw qam64 qpsk 1cwcdma 4cwcdma lte input (dbm) 09602-021 figure 46 . v rms error from cw linear reference vs. signal modulation, frequency = 900 mhz, c lpf = 0.1 f (cw, qpsk, qam64, 1cw - cdma, 4cw - cdm a, lte test model e - tm1_1_20mhz ) ?3 ?2 ?1 0 1 2 3 ?25 ?20 ?15 ?10 ?5 0 5 10 15 error (db) input (dbm) cw qam64 qpsk 1cwcdma 4cwcdma lte 09602-022 figure 47 . v rms error from cw linear reference vs. signal modulation, frequency = 2140 mhz, c lpf = 0.1 f (cw, qpsk, qam64 , 1cw - cdma, 4cw - cdma, lte test model e - tm1_1_20mhz)
data sheet ADL5511 rev. a | page 17 of 28 circuit description the ADL5511 employs a proprietary rectification technique to strip off the carrier of an input signal to reveal the true envelope . in this first detection stage, the carrier frequency is doubled and an on - chip two - pole passive low - pass filter accurately preserves the envelope and filters out the carrier. the poles of this filter, as defined by the on - chip rc filters (0.4 pf, 400 ?, 0.8 pf, 250 ?) values allow some carrier leakthrough for common rf frequencies. this is to ensure that maximum envelope bandwidth can be maintained. for more details , see the basic connections section. rfin enbl r m s 400? 20pf e n v e l o p e vrms venv eref vpos vpos vpos 400? flt1 flt2 flt3 comm flt4 0.8pf 0.4pf 10k? 5pf 250? 250? 100 ? ad l 5511 bias and power- down control g = 1.7 g = 1.5 nc 15 14 4 2 3 11 10 9 13 6 7 8 12 16 1 5 09602-049 figure 48 . block diagram the extracted envelope is further processed in two parallel channels, one computing the rms value of the envelope and the other transferring the envelope with appropriate scaling to the envelope output. e nvelop e p ro pagation delay the delay specified in this data sheet is with no external cap acitor at the flt2 and flt3 pins. the delay through the ADL5511 , although very small , depends upon a number of factors, notable of w hich are internal filter component values and op amp compensation cap acitor s. the delay will vary from part to part by approximately 15 % due to process variations . in addition , the choice of external flt2 and flt3 values, as well as load on the vnev pin w ill increase the delay. in this case, the delay variation will be dominated by the part - to - part tolerance of the external capacitors. rms circuit descript ion the rms processing is done using a proprietary translinear technique. this method is a mathematic ally accurate rms computing approach and achieves unprecedented rms accuracies for complex modulation signals irrespective of the crest factor of the input signal. an integrating filter capacitor does the square - domain averaging. the vrms output can be e xpressed as t1 t2 dt v a vrms t2 t1 in u u 3 2 (1) note that a is a scaling parameter that is decided on by the on - chip resistor ratio, and there are no other scaling parameters involved in this computation, which means that the rms output is inherently free from any sources of error due to temperature, supply, and process variation. rms filtering t he on - chip rms filtering corner is internally set by a 400 ? resistor and a 20 pf capacitor, yielding a corner frequency of approximately 20 mhz. wh ereas this filter s out a ll carrier frequencies, most of the modulation envelope is not filtered. for adequate rms filtering , connect an external filter capacitor between flt4 (pin 14) and vpos (pin 15). this capacitance acts on the internal 400 ? resistor (see figure 48 ) to yield a new corner frequency for the rms filter given by pf 20 ) 400 2 ( 1 : u u rms flt4 f c (2) for example , a supply - referenced 0.1 f capacitor on flt4 reduce s the corner frequency of the rms averag ing circuit to approximately 4 k hz. rms filter ing has a direct impact on rms accuracy. for most accurate detection, the rms filter corner should be low enough to filter out most of the modulation content. this will corre - spond to a corner frequency that is significantly lower than the bandwidth of the signal being measured. see the choosing a value for the rms averaging capacitor (c flt4 ) section for more details and filtering options.
ADL5511 data sheet rev. a | page 18 of 28 output drive c apability and b uffering the envelope output of the ADL5511 is presented on the venv pin as a single - ended buffered output with low output imped - ance. t o achieve high envelope bandwidth, this output is not ground referenced, unlike the vrms output, which is ground referenced. the venv ou tput has a no signal dc value of about 1.1 v. this dc reference is temperature dependent and is presented as a standalone reference voltage on the eref pin and as a buffered output. the true envelope at any instant of time is simply (v env ? v eref ), but t hese two pins do not constitute a differential output. eref is a fixed dc voltage and v env carries all the envelope information. the venv output is capable of supporting a parallel load of 500 ? and 10 pf at full - scale envelope output and max imum bandwidth . lighter loads (higher r and lower c) are always recommended whenever possible to minimize power consumption and achieve maximum possible bandwidth. the maximum source/sink current capacity of the vnev output is 15 ma peak and load conditions should be s uch that this is not exceeded. the maximum output voltage at this pin is approximately (vpos ? 1.5) v. for the case of ac coupling only, the venv output can drive a 50 ? load, as long as the maximum signal swing does not exceed an amplitude of approximately 1.5 v p - p . this corre - sponds to the peak signal current of 15 ma into the 50 ? load. if a 50 ? drive capability is desired, the maximum input signal to ADL5511 should be adjusted, such that this output swing condition is not exceeded. a 50 ? load should never be dc coupled to the venv output, as i t presents a current draw of >20 ma even for no - signal condition corresponding to 1.1 v nominal dc voltage at the venv pin. the vrms buffered output can source a maximum current of 3 ma, but is not designed to sink any appreciable amount of current. if cu rrent sink capability is desired at this pin, a shunt resistance to ground can be connected. the vrms output has an on - chip series resistance of 100 ? , to allow a low - pass filtering of the residual ripple using a single shunt cap acitor at this pin. large shunt cap acitor s at this pin may also require a shunt resist or to be placed to allow fast discharging of the capacitor. the internal shunt resistanc e on th e vrms pin is 10 k ?. n ote that any shunt resistance placed on this pin creates a resisti ve divider with the on - chip 100 ? series resistance. the eref output buffer also has 3 ma current sourcing capability. the internal shunt resistance on this pin through which any current must be sunk, is 12 k ?. a capacitor to ground can be placed on this pin to eliminate any rf or e nvelope ripple at this pin to ensure that voltage at this pin acts as a clean reference for the venv output for all possible carrier and envelope frequencies. viewing the envelope on an oscilloscope when viewing the venv output on an oscilloscope, use a low capacitive fet probe. this reduces the capacitance presented to the venv output and avoids the corresponding effects of larger cap acitive loads.
data sheet ADL5511 rev. a | page 19 of 28 applications informa tion rfin enbl r m s 400? 20pf e n v e l o p e vrms rms output envelope output envelope reference venv eref vpos vpos vpos +5v 400? flt1 flt2 flt3 comm flt4 vpos 0.8pf 0.4pf 10k? 5pf 250? 250? 100 ? ad l 5511 bias and power- down control g = 1.7 g = 1.5 vpos nc r5 75? 15 14 4 2 3 11 10 9 13 6 7 8 12 16 1 5 c14 0.1f c17 0.1f c13 100pf c1 100pf c2 100pf c10 (see text) c6 (see text) 09602-050 figure 49 . basic connections basic connections basic connections for operation of the ADL5511 are shown in figur e 49 . the ADL5511 requires a single supply of 5 v. the supply is connected to the vpos supply pin. decouple t his pin using two capacitors with values equal or similar to those shown in figure 49 . place these capacitors as close as possible to the vpos pin. an external 75 resistor combines with the relatively high rf input impedance of the ADL5511 to provide a broadband 50 match. place a n ac coupling capacitor between this resistor and rfin. the envelope ou tput is available on pin 10 ( venv ) and is referenced to the 1.1 v dc voltage on pin 9 (eref). the rms output voltage is available at the vrms pin with rms averaging provided by the suppl y - referenced capacitance on pin 14 (flt4). o peration b elow 1 ghz/ e nv elope f iltering t o operate the ADL5511 at frequencies below 1 ghz, a number of external capacitors must be added to the flt3 , flt2 , and flt1 pins . t hese changes are in addition to the choice of an appropriate rms averaging capacitor, see the choosing a value for the rms averaging capacitor (c flt4 ) section. as part of the internal signal processing algorithm, the rf inp ut signal passes through a low - pass filter comprising of a 10 k? r esistor and a 5 pf capacitor (see figure 49) . this corresponds to a corner frequency of approximately 3.2 mhz. if the carrier frequency is less than approximately ten times this value (32 mhz), this corner frequency must be redu ced. the internal 5 pf capacitance can be augmented by connecting a ground referenced capacitor to pin 3 (flt1). the value of the external capacitance is set using the following e quation : pf 5 ) 000 , 10 2 ( 1 : u u 3db flt1 f c (3) for example, a 100 pf capacitance on flt1 will reduce the corner frequency to 150 k hz. as a general guideline, this corner frequency should be set to be at least one tenth of the minimum expected carrier frequency. this ensure s a flat frequency response around the frequency of interest. the env elope detection path of the ADL5511 includes internal carrier - suppression low - pass filtering. with the flt2 and flt3 pins not connected, two internal 1 ghz and 800 mhz low - pass filters (operating in series) re move the rf carrier from the envelope output signal. the equations for these filters are as follows: ghz 1 ) 400 pf 4 . 0 2 ( 1 : u u (4) a nd mhz 800 ) 250 pf 8 . 0 2 ( 1 # : u u (5) because the envelope detection circuitry includes a full - wave rectifier, this filter has to prim arily suppress the signal at twice the original input frequency.
ADL5511 data sheet rev. a | page 20 of 28 for input frequencies in the 900 mhz range, there will still be significant carrier content on the envelope output. with the two filters providing a combined 6 db roll - off at approximately 900 mhz and with the residual carrier at 1.8 ghz, carrier filtering of approximately 18 db can be expected (the two single - pole filters provide a combined roll - off of 12 db per octav e . the inte rnal filtering of the carrier in the envelope detection path c an be augmented by adding additional supply - referenced capacitance to the flt2 and flt3 pins. the required capaci - tance can be calculated using the following equations: pf 4 . 0 ) 400 2 ( 1 : u u flt2 flt2 f c (6) a nd pf 8 . 0 ) 250 2 ( 1 : u u flt3 flt3 f c (7) w here f lt2 and f lt3 are the d esired corner frequencies. for example, to set the corner frequency to 200 mhz, c flt2 and c flt3 should be set to 1.6 pf and 2.4 pf , respectively. the two corner frequencies should be set so that they are approximately equal. care should be taken not to set the corner frequency of this carrier suppression filter too low as it will start to degrade envelope bandwidth . the ADL5511 has an envelope bandwidth of 130 mhz . thus, if the capacitors on flt2 and flt3 ar e so big that the carrier - suppression corner freq uency approaches 130 mhz , the carrier filtering effort will directly impact the envelope bandwidth. t hus, the corner frequency should be set low enough so that the rf carrier is adequately removed from the e nvelope output while still maintaining the desired envelope bandwidth. an alternative option would be to filter the carrier at the venv output using a higher order filter . choosing a value for the rms averaging capacitor ( c flt4 ) c flt4 provides the averagi ng function for the internal rms computation, the result of which is available at the vrms output . as already noted, t he on - chip rms filtering corner is internally set by a 400 ? resistor and a 20 pf capacitor, yielding a corner frequency of approximately 20 mhz. for adequate rms filtering , connect an external filter capacitor between flt4 (pin 14) and vpos (pin 15). this capacitance acts on the internal 400 ? res istor to yield a new corner fre quency for the rms filter given by the following equation : pf 20 ) 400 2 ( 1 4 : u u flt flt4 f c ( 8 ) for example , a supply - referenced 0.1 f capacitor on flt4 reduce s the corner frequency of the rms averaging circuit to approximately 4 k hz. the size of the rms filtering capacitor has a direct impact on the rms accuracy up to a poi nt . for most accurate detection, the rms filter corner should be low enough to filter out most of the modulation content. this correspond s to a corner frequency that is significantly less than the bandwidth of the signal being measured. table 4 shows recommended minimum values of c flt4 for popular modulation schemes. using smaller capacitor values than these will result in rms measurement errors ; using higher values will not further improve rms accuracy but will reduce the output noise on vrms at the expense of increased rise and fall times. in table 4 , rise and fall times are also shown along with residual output noise . the recommended minimum values for c flt4 were experimen - tally determined by startin g out with a large capacitance value on the flt4 pin (for example, 10 f). the value of v rms was noted for a fixed input power level (for example, 0 dbm). the value of c flt4 was then progressively reduced (this can be done with press - down capacitors) until the value of v rms started to deviate from its original value (this indicates that the accuracy of the rms computation is degrading and that c flt4 is becoming too small). the recommended minimum value for c flt4 is roughly inversely proportional to the bandwidth of the input signal , that is, wider bandwidth signals tend to require smaller minimum filter capacitances . as already noted, the value of c flt4 sets up an internal low pass corner frequency, which filters the rms voltage. as carrier bandwidth inc reases, a larger proportion of the residual noise (which has been effectively mixed down to baseband) is filtered away. this results in smaller capaci - tances being required as carrier bandwidths increase. table 4 . recommended mi nimum c flt4 values for various modulation schemes (pin = 0 dbm) modulation/standard pep to rms ratio signal bandwidth c flt4 ( min ) output noise rise/fall time (10% to 90%) w - cdma, one - carrier, tm1 -64 9.83 db 3.84 mhz 220 nf 98 mv p -p 82 s / 3 1 0 s w - cdma f our - carrier, tm1 - 64, tm1- 32, tm1 - 16, tm1 - 8 12.08 db 18.84 mhz 100 nf 140 mv p -p 40 s / 140 s lte test model e - tm1_1_4mhz 9.83 db 4 mhz 220 nf 135 mv p -p 82 s / 310 s lte test model e - tm1_1_10mhz 11.99 db 10 mhz 100 nf 89 mv p - p 40 s / 140 s lte test mo del e - tm1_1_20mhz 11.58 db 20 mhz 47 nf 90 mv p -p 20 s / 70 s
data sheet ADL5511 rev. a | page 21 of 28 for applications that are not response time critical, a relatively large capacitor can be placed on the flt4 . there is no maximum capacitance limit for c flt4 . fig ure 50 shows how output noise , rise time and fall time var y vs. c flt4 when the ADL5511 is driven by a n 1.9 ghz lte carrier with a bandwidth of 10 mhz ( lte test model e - tm1_1_10mhz, p eak - to - a verage r atio = 1 1.99 db ). 0.1 1 10 100 1000 10000 100000 1000000 10000000 0 100 200 300 400 500 600 700 800 1 10 100 1000 rise/ f al l time (s) c flt4 (nf) output noise (mv p-p) output noise (mv p-p) 10% to 90% rise time ( s) 90% to 10% fall time ( s) 09602-066 figure 50 . output noise, rise and fall times vs. c flt4 capacitance, 10 mhz bw lte carrier ( lte test model e - tm1_1_10mhz) at 1.9 ghz with p in = 0 dbm e nvelope t racking a ccuracy t he envelope tracking accuracy of the ADL5511 is measured in term s of the higher order di stortion of the envelope output when the rf input signal is am modulated using a low - harmonic sinusoid at a given frequency. such an input sinusoidal envelope has been generated using the adl5390 multiplier modulator . this generates a double sideband am modulated signal of a known modulation index. in this measurement, the ADL5511 acts as free - running am demodulator without requiring a local oscillator to demodulate the signal. ?80 ?70 ?60 ?50 ?40 ?30 ?20 ?10 0 10 20 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 rfin (dbm) thd (dbc) carrier suppression (dbc) envelope gain (db) 09602-069 figure 51 . thd on v env vs. rf input level; 1900 mhz rf input, am modulated by a 20 mhz sine wave (modulation index = 0.25 ), v env output ac - coupled into a 50 ? spectrum analyzer load figure 51 shows such a plot total harmonic distortion (thd) of the venv output vs. rf input power for the modulation index of 0.25 . as the input power level increases, the thd improves until it sharply degrades at an inpu t power level of approxi mately 13 dbm. this sharp decrease is caused by the clipping of the am signals peak envelope. figure 51 also shows carrier leak age at venv in dbc wit h respect to the input carrier amplitude. this measurement , when conducted over the full input power range of the ADL5511 , suffers from measurement inaccuracies of the input modulated signal due to the spectru m analyzer s noise flo or and therefore does not accurately reveal the ADL5511 s limitations at the lower end of the measurement range. in addition to this, the process of generating an am signal for this test (using the adl5390 multiplier) is not perfect and resulted in a source signal whose envelope was not harmonically pure . time d omain envelope track ing accuracy the envelope tracking accuracy of the ADL5511 can also be assessed in the time domain by looking at the input peak power levels that cause clipping. the usable rms input power range of the ADL5511 var ies dependin g on the desired accuracy level and the peak - to - average ratio of the input signal. figure 4 shows the linear operating range of the venv output when the rf input is driven by unmodulated sine wave s at various frequencies . this s hows operation up to rms i nput levels of approximately 19 dbm. if the signal has a peak - to - average ratio that is greater than the square root of two , the usable input range on rfin will decrease. in general , the maximum input power for linear operation sh ould be determined by the peak envelope power (pep) of the input signal. figure 52 shows the time - domain response of the venv output to a 900 mhz lte carrier with a bandwidth of 20 mhz (test model e - tm1_2_20mhz). the signal lev el of the carrier (7 dbm rms , 19 dbm pep) w as deliberately increased until clipping was observed at the venv output . note that the peak envelope power of a signal is derived based on the rms level of the signal during a peak cycle, that is v p - p / 2. f o r example, a signal tha t achieves a peak voltage of 10 v ( or 20 v p - p) has a pep of 30 dbm. according to this definition , the pep of a sine wave is equal to its rms power level because it has a constant envelope. 09602-055 figure 52 . venv response to a 20 mh z lte carrier with a pep of 19 dbm that has been triggered to capture the envelopes peak level
ADL5511 data sheet rev. a | page 22 of 28 vrms and venv output offset the 900 mhz rf power sweeps in figure 53 and figure 54 sho w distributions of the vrms and venv output s voltages for multiple devices at 25 c. the vrms output response flattens out at approximately ? 30 dbm while the various venv response traces begin to fanout unpredictably ( figure 4 and figure 7 show this behavior at other frequencies) . while these plots suggest that operation at input levels dow n to ? 30 dbm is feasible, account must also be taken fo r variations over temperature. figure 10 to figure 38 show how the linearity error starts to increase below input levels of ? 20 dbm (the size of t he error varies between venv and vrms and with frequency). 1 10 100 1000 10000 ?40 ?30 ?20 ?10 0 10 input (dbm) v rms (mv) 09602-067 figure 53 . vrms output vs. input level distribution of 50 devices, 900 mhz frequency 1 10 100 1000 10000 ?40 ?30 ?20 ?10 0 10 input (dbm) v env (mv) 09602-068 figure 54 . venv output vs. input level distribution of 50 devices, 900 mhz frequency device calibration a nd error calculation because slope and intercept vary from device to device , calibration must be performed to achieve high accuracy. in general, calibration is performed by applying two or more known in put power levels to the ADL5511 and measuring the corresponding output voltages. the calibration points are generally chosen to be within the linear operating range of the device. for a two - point calibratio n, the conversion gain (or slope ) and intercept are calculated for v rms and v env using the following equations: slope = ( v out 2 ? v out 1 )/( v in2 ? v in1 ) ( 9 ) intercept = v out 1 ? ( slope v in1 ) ( 10) where: v in is the rms input voltage to rfin. v out is the voltage output at vrms or venv . because the gain and intercept of the rms and envelope paths will b e different, both paths should be calibrated, that is, with a measured signal applied to rfin, v env , and v rms . t o ensure that the voltage at venv and vrms is a stead y - state value, a constant envel ope signal such as a sine wave should be used as the source during calibration. once slope and intercept are calculated, an equation can be written that allows calcula tion of the input rms or e nvelope level using the following equations: v in rms = ( v rms ? intercept vrms )/ slope rms ( 1 1 ) v inenv = ( v env ? intercept venv )/ slope venv ( 1 2 ) t he law conformance error , that is , the difference between the actual input level (v in_ideal ) and the measured/calculated input level (v measured ), of the se calculations can be c alculated using the following equation : error (db) = 20 log [( v measured ? intercept )/( slope v in _ ideal )] ( 1 3 )
data sheet ADL5511 rev. a | page 23 of 28 figure 55 is a plot of this error for venv at 1900 mhz for a multiple devices at +25c, +85c, and ?40c with calibration performed at two points, ?14 dbm and +5 dbm (notice how the error at 25c at the calibration points is zero). these error plots for all temperatures are calculated using the 25c slope and intercept. this is consistent with calibration in a mass production environment where calibration at temperature is generally not practical. ?3 ?2 ?1 0 1 2 3 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 p in (dbm) error (db) 09602-058 ?40c +25c +85c figure 55. venv linearity error vs. input level and temperature using a two-point calibration at 1900 mhz by adding a third calibration point, the linearity of the ADL5511 can be enhanced at lower power levels. with a three-point calibration, calibration coefficients (slope and intercept) are calculated for each segment (thus, there will be two slopes and two intercepts). figure 56 shows the same data as figure 55, but with a three- point calibration (calibration points at ?26 dbm, ?15 dbm, and +5 dbm. this helps to extend the usable operating range of the ADL5511 well below ?25 dbm. ?3 ?2 ?1 0 1 2 3 ?30 ?25 ?20 ?15 ?10 ?5 0 5 10 15 p in (dbm) error (db) 09602-059 ?40c +25c +85c figure 56. venv linearity error vs. input level and temperature using a three- point calibration at 1900 mhz error vs. frequency figure 57 and figure 58 show how the v rms and v env output voltages and error vary with input frequency when the ADL5511 is calibrated at a single frequency. in this example, the ADL5511 has been calibrated at 25c at 1.9 ghz. the plots also show how the output voltage and error vary above and below this frequency. ?6 ?4 ?2 0 2 4 6 0 100 200 400 300 500 600 0 1000 2000 3000 4000 5000 6000 output (mv) frequency (mhz) v rms at ?40c v rms at +25c v rms at +85c error at ?40c error at +25c error at +85c 09602-061 error (db) figure 57. vrms output vs. freq uency for a fixed input power, p in = 0 dbm, calibration at 1.9 ghz, 25c ?8 ?6 ?4 ?2 0 2 4 6 8 0 50 100 150 200 250 300 350 400 0 1000 2000 3000 4000 5000 6000 output (mv) frequency (mhz) v env at ?40c v env at +25c v env at +85c error at ?40c error at +25c error at +85c 09602-060 error (db) figure 58. venv output vs. freq uency for a fixed input power, p in = 0 dbm, calibration at 1.9 ghz, 25c
ADL5511 data sheet rev. a | page 24 of 28 evaluation board fig ure 59 shows the schematic of the ADL5511 evaluation board. th is 4 - layer board is powered by a single supply in the 4.75 v to 5.25 v range. the power supply is decoupled by 100 pf and 0.1 f capacitors. table 5 details the various configuration options of the evaluation board. figure 60 and figure 61 show the bottom side and top side layouts , respectively . the rf input has a bro adband match of 50 ? using a single 75 resistor at r 5 . the vrms output is accessible via a clip lead (a pad is also available where an sma connector is install e d ) . the venv output is accessible via an sma connector. for response - time critical measureme nts where stray capacitance must be minimized, r2 can be removed and a fet probe can be attached to jp1 (jp1 must be installed) . 09602-062 figure 59 . evaluation board schematic
data sheet ADL5511 re v. a | page 25 of 28 09602-063 figure 60 . layout of evaluat ion board, bottom side 09602-064 figure 61 . layout of evaluation board, top side table 5 . evaluation board configuration options component description default condition vpos, gnd ground and s upply v ector p ins . not applicable c13, c14 power supply decoupling . nominal supply decoupling of 0.01 f and 100 pf. c13 = 1 00 pf (size 0402) c14 = 0.1 f (size 0402) c17 rms filter c apacitor (flt4) . the internal rms averaging capacitor can be augmented by placing ad ditional capacitance in c17. c17 = 0.1 f (size 0402) r5, c1 rf i nput i nterface . the 75 ? resistor at r5 combines with the ADL5511 internal input impedance to give a broadband input impedance of around 50 ? . c1 is an ac coupling cap acitor , which should be chosen according to nominal carr ier frequency. r5 = 75 ? (size 0402) c1 = 100 pf (size 0402) r18, c9 rms o utput and o utput f iltering . the combination of c9 and the internal 100 ? output resistance can be used to form a low - pass filter to reduce the output noise on the vrms output beyond the reduction due to c17 (capacitor on flt4) . the rms output is available on the vrms clip - on test point . to observe vrms using an sma cable, an sma connector can be soldered on to the pad labeled vrms1. r18 = 0 ? (size 0402) c9 = open (size 0402) vrms c l ip - o n t est p oint = installed vrms1 sma c onnector = open r19, c8, r2 , jp1 venv o utput and o utput f iltering . the venv output is available on the venv sma connector. if post - envelope filtering is desired, r19 and c8 can be used to form a low - pass filter at t he venv output. r2 can be removed to isolate the jp1 jumper from the venv sma connector and jp1 can be installed and used to interface to a fet probe . this helps to eliminate any excessive trace and connector ca pacitance . venv sma c onnector = installed r19 , r2 = 0 ? (size 0402) c8 = open (size 0402) jp1 = open r20, c7 envelope r eference o utput and o utput f iltering . the eref output is available on the eref clip - on test point. the dc reference voltage at pin eref can be filtered by the low - pass filter formed by the combination of r20 and c7. to observe the eref voltage using an sma cable, an sma connector can be sol dered on to the pad labeled eref1. r20 = 0 ? (size 0402) c7 = open (size 0402) eref clip - on test point = installed eref1 sma connector = open r1, sw1 device e nable . when the switch is set toward the sw1 label, the enbl pin is connected to vpos, which enables the ADL5511 . in the opposite switch position, the enbl pin is grounded which disables the ADL5511 . r1 = 0 ? (size 0402) sw1 = towards sw1 label c6, c10 envelope c arrier - r emoval f ilter s (flt2, flt3) . the corner frequency of the internal venv two - pole carrier - removal filter can be reduced b y placing add itional capacitors in c6 and c10. c6, c10 = o pen (size 0402) c2 envelope r eference c arrier - r emoval f ilter (flt1) . the internal filter tha t removes the carrier from the e nvelope reference dc voltage can be augmented by placing a capacitor in c2. c2 = 100 p f (size 0402) r3, r14, r15, r16, r17 alternate i nterface. the p2 edge connector provides an alternate access point to the various ADL5511 signals. r3, r14, r15, r16, r17 = open (size 0402)
ADL5511 data sheet rev. a | page 26 of 28 outline dimensions 3.10 3.00 sq 2.90 0.30 0.23 0.18 1.75 1.60 sq 1.45 08-16-2010-e 1 0.50 bsc bottom view top view 16 5 8 9 12 13 4 exposed pad p i n 1 i n d i c a t o r 0.50 0.40 0.30 seating plane 0.05 max 0.02 nom 0.20 ref 0.25 min coplanarity 0.08 pin 1 indi c ator for proper connection of the exposed pad, refer to the pin configuration and function descriptions section of this data sheet. 0.80 0.75 0.70 compliant to jedec standards mo-220-weed-6. figure 62. 16-lead lead frame chip scale package [lfcsp_wq] 3 mm 3 mm body, very thin quad (cp-16-22) dimensions shown in millimeters ordering guide model 1 temperature range package description package option ordering quantity ADL5511acpz-r7 ?40c to +85c 16-lead lead frame chip scale package [lfcsp_wq] cp-16-22 1500 ADL5511-evalz evaluation board 1 z = rohs compliant part.
data sheet ADL5511 re v. a | page 27 of 28 notes
ADL5511 data sheet rev. a | page 28 of 28 notes ? 2011 C 2012 analog devices, inc. all rights reserved. tradema rks and registered trademarks are the property of their respective owners. d09602 - 0 - 2/12(a)

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